A Novel all-in-one Compact Electrostatic Discharge Protection Structure for Mixed-Signal and RF ICs

This project developed a novel compact all-in-one ESD protection structure. Because of is small size, high ESD-to-Si ratio, high ESDV protection, and much reduced ESD-induced parasitic effects, this new design is a good option for advanced mixed-signal and RF IC applications. Full design prediction was achieved using our new mixed-mode ESD simulation-design methodology. A U.S. Patent is currently pending associated with this invention.

REFERENCES:

• H. G. Feng, K. Gong, and A. Z. Wang, "A Novel on-Chip Electrostatic Discharge Protection Design for RFIC’s", in press, J. Microelectronics, Elsevier Science, 2001.